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PDF Si8752 Data sheet ( Hoja de datos )

Número de pieza Si8752
Descripción Isolated FET Driver
Fabricantes Silicon Laboratories 
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Si8751/52 Data Sheet
Isolated FET Driver with Pin Control or Diode Emulator Inputs
The Si875x enables new pathways to creating custom solid state relay (SSR) configura-
tions. Supporting customer-selected external FETs, the Si875x combines robust isolation
technology with an SSR FET driver to form a complete, isolated switch. Versatile inputs pro-
vide digital CMOS pin control (Si8751) or diode emulation (Si8752) to best suit the applica-
tion, plus flexible outputs to support driving ac or dc load configurations. A floating secon-
dary side dc voltage source is unnecessary as the product generates its own self-contained
gate drive output voltage, reducing cost, size, and complexity.
The Si875x eliminates the need for bulky mechanical relays which can be difficult to assem-
ble onto PCBs and add switching noise to the system. Further, with the customer selecting
their own flexible FET switch, the design can be completely optimized for the application's
power, cost, and performance requirements. Traditional SSRs also integrate optocoupler-
style LED inputs, which limit the operating temperature range of the solution, but the Si875x,
with its input diode emulator or digital input control, experiences no such limitation and can
support full industrial and automotive temperature ranges with increased stability and longer
life.
The Si875x drives FET gates with a nominal 10 V using as little as 1 mA input current. In-
creasing the input current to 10 mA enables turn-on times as fast as 94 µs. Input side vol-
tages on the Si8751 are flexible from 2.25 V to 5.5 V supporting seamless connection to
low-power controllers. The Si875x devices provide a clamping device to prevent unintended
turn-on of the external FET when a high dV/dt is present on the FET’s drain.
KEY FEATURES
• Digital CMOS input option
• Diode emulation input option
• 10 V output with 1 mA input current
• As fast as 94 µs turn-on time
• Internally-generated secondary side
power supply
• Miller clamp cap support for reducing
inductive chatter
• DC or AC load switching support
• Drives user-selected external FETs
• 2.5 kVrms isolation rating
• UL, CSA, VDE, and CQC certifications
(pending)
• AEC-Q100 qualified
• Industrial –40 to 105 °C or Automotive
–40 to 125 °C temperature ranges
• ROHS-compliant SOIC-8 Package
APPLICATIONS
The Si875x is qualified to the AEC-Q100 standard, making it suitable for automotive applica-
tions. Further, its 2.5 kVrms isolation rating forms the basis for full certification to UL, CSA,
VDE, and CQC (pending).
Applications include mechanical relay , photo switch, or SSR replacement in motor control,
valve control, HVAC relay, automotive, charging, battery monitoring, ac mains line switch-
ing, and more.
• Motor Controls
• Valve Controls
• HVAC Relays
• HEV/EV Automotive Charging
• Battery Monitoring
• AC Mains Line Switching
The Si8751 and Si8752 come in ROHS-compliant SOIC-8 packaging, providing a compact,
industry-standard footprint and generous margin to creepage and clearance requirements.
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This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Preliminary Rev. 0.5

1 page




Si8752 pdf
2.1 Device Behavior
The following are truth tables for the Si875x family.
Table 2.1. Si8751 Truth Table
Si8751/52 Data Sheet
System Overview
VDD
Powered
Powered
Unpowered
IN
H
L
X
Table 2.2. Si8752 Truth Table
Gate
H
L
L
Input Current
> If(TH)
< If(TH)
Gate
H
L
2.2 Power Supply Connections (Si8751 Only)
The Si8751 requires a 0.1 µF bypass capacitor between VDD and GND. The capacitor should be placed as close as possible to the
package. To enhance the robustness of a design, the user may also include a 1 µf capacitor for bulk decoupling as well as a resistor
(50–300 Ω) in series with the input if the system is excessively noisy.
2.3 TT Pin Description (Si8751 Only)
The Si8751 provides a pin to control how much current is consumed by the supply when the input pin is logic high. The more current
consumed by the input supply, the faster the output can turn on the external FET. This allows the application designer to optimize the
tradeoff between power consumption and switching time.
Typically, this pin is connected to the supply ground through a resistor. The greater the value of the resistor, the less current is con-
sumed by the input supply. Values can range from 0 Ω (shorted to ground) to open (TT not connected).
In addition to a resistor, a capacitor, typically 0.1 µf, can be placed in parallel to the resistor. This allows the device to draw more current
to switch the external FET on quickly yet draw less supply current in the steady state. Total power over time is reduced while maintain-
ing fast switching of the FET.
VDD Max Drive
Current
MCAP1
TT
IN
GND
GATE
SOURCE
MCAP2
Figure 2.5. Si8751 TT Example
Static Drive
Current
~1/C
t
Figure 2.6. Drive Current vs. Time Using TT with Capacitor
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Preliminary Rev. 0.5 | 4

5 Page





Si8752 arduino
Si8751/52 Data Sheet
Electrical Specifications
Table 4.3. Insulation and Safety-Related Specifications
Parameter
Symbol
Test Condition
SOIC-8 Value
Unit
Nominal Air Gap
L(1O1)
4.7 mm
(Clearance)
Nominal External Tracking
L(1O2)
3.9 mm
(Creepage)
Minimum Internal Gap
0.008
mm
(Internal Clearance)
Tracking Resistance
PTI IEC60112 600 V
(Proof Tracking Index)
Erosion Depth
ED
0.04 mm
Resistance
(Input-Output)1
RIO
1012
Ω
Capacitance
(Input-Output)1
CIO f = 1 MHz 0.5 pF
Input Capacitance2
CI
3.0 pF
Notes:
1. To determine resistance and capacitance, the Si875x is converted into a 2-terminal device. All pins on side 1 are shorted to cre-
ate terminal 1, and all pins on side 2 are shorted to create terminal 2. The parameters are then measured between these two
terminals.
2. Measured from input pin to ground.
Table 4.4. IEC 60664-1 Ratings
Parameter
Basic Isolation Group
Installation Classification
Test Condition
Material Group
Rated Mains Voltages < 150 VRMS
Rated Mains Voltages < 300 VRMS
Rated Mains Voltages < 400 VRMS
Rated Mains Voltages < 600 VRMS
SOIC-8 Specification
I
I-IV
I-III
I-II
I-II
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Preliminary Rev. 0.5 | 10

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