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PDF CPM2-1200-0040B Data sheet ( Hoja de datos )
| Número de pieza | CPM2-1200-0040B | |
| Descripción | Silicon Carbide Power MOSFET | |
| Fabricantes | Cree | |
| Logotipo |  |
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VDS 1200 V
CPM2-1200-0040B
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C 36 A
RDS(on)
40 mΩ
N-Channel Enhancement Mode
Features
Chip Outline
• New C2M SiC MOSFET technlogy
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Battery Chargers
• Motor Drives
• Pulsed Power Applications
Part Number
CPM2-1200-0040B
Die Size (mm)
3.10 x 5.90
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
1200
V VGS = 0 V, ID = 100 μA
-10/+25 V Absolute maximum values
-5/+20 V Recommended operational values
60 A VGS = 20 V, TC = 25˚C
40 VGS = 20 V, TC = 100˚C
Note 1
ID(pulse) Pulsed Drain Current
TJ , Tstg Operating Junction and Storage Temperature
160
-55 to
+150
A Pulse width tP limited by Tjmax
˚C
TL
TProc
Solder Temperature
Maximum Processing Temperature
260 ˚C 1.6mm (0.063”) from case for 10s
325 ˚C 10 min. maximum
Note (1): Assumes a RθJC < 0.38 K/W
1 CPM2-1200-0040B Rev. B
1 page  
Typical Performance
-6 -5 -4 -3 -2 -1
0
0
Conditions:
TJ = -55 °C
tp < 200 µs
VGS = 0 V
VGS = 5 V
-20
VGS = 10 V
VGS = 15 V
VGS = 20 V
-40
-60
-80
-6 -5
Conditions:
TJ = 25 °C
tp < 200 µs
-4 -3 -2 -1
0
0
VGS = 0 V
VGS = 5 V
-20
VGS = 10 V
VGS = 15 V
VGS = 20 V
-40
-60
-80
Drain-Source Voltage, VDS (V)
-100
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-6 -5
Conditions:
TJ = 150 °C
tp < 200 µs
-4 -3 -2 -1
VGS = 15 V
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 20 V
0
0
-20
-40
-60
-80
Drain-Source Voltage, VDS (V)
-100
Figure 15. 3rd Quadrant Characteristic at 150 ºC
10000
1000
Conditions:
TJ = 25 °C
Ciss VAC = 25 mV
f = 1 MHz
Coss
100
Crss
10
Drain-Source Voltage, VDS (V)
-100
Figure 14. 3rd Quadrant Characteristic at 25 ºC
100
80
60
40
20
0
0
200
400
600
800
1000
1200
Drain to Source Voltage, VDS (V)
Figure 16. Output Capacitor Stored Energy
10000
1000
Conditions:
Ciss
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
100
Coss
10 Crss
1
0 50 100 150
Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0-200 V)
200
1
0 200 400 600 800 1000
Drain-Source Voltage, VDS (V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0-1000 V)
5 CPM2-1200-0040B Rev. B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CPM2-1200-0040B.PDF ] | |
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