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PDF RU1H100R Data sheet ( Hoja de datos )
| Número de pieza | RU1H100R | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU1H100R
N-Channel Advanced Power MOSFET
Features
• 100V/75A
RDS (ON)=11mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Extremely high dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
Applications
·High Speed Power Switching
·Uninterruptible Power Supply
Pin Description
TO-220
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
Drain-Source Avalanche Ratings
StoragEeAST③emperatAuvrealaRnacnhgeeEnergy ,Single Pulsed
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev.B –SEP., 2010
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
Unit
100
±25
175
-55 to 175
①
75
②
300
①
75
59
150
75
1.0
V
°C
°C
A
A
W
°C/W
196 mJ
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU1H100R
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B –SEP., 2010
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU1H100R.PDF ] | |
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