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Datasheet BZX84C3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BZX84C3 | SURFACE MOUNT SILICON ZENER DIODES BZX84C2V4 SERIES
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE 2.4 to 75 Volt POWER
410 mWatt
FEATURES
• Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU dire | Pan Jit International | diode |
2 | BZX84C3 | 350mW SURFACE MOUNT ZENER DIODE | Won-Top Electronics | diode |
3 | BZX84C3 | Silicon 410 mWatt Zener Diodes MCC
Features
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omponents 21201 Itasca Street Chatsworth !"# $
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BZX84C2V4 THRU BZX84C39
Silicon 410 mWatt Zener Diodes
Planar Die construction 410mW Power Dissipation Zener Voltages from 2.4V - 39V Ideally Suited for Automate | Micro Commercial Components | diode |
4 | BZX84C3 | SURFACE MOUNT ZENER DIODES/SOT-23 | Jinan Gude Electronic Device | diode |
5 | BZX84C3 | Zener Diode, Rectifier ( SMD ) CE
CHENYI ELECTRONICS
BZX84C-SERIES
SURFACE MOUNT ZENER DIODES
350mW Part No. BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 BZX84C3V9 BZX84C4V3 BZX84C4V7 BZX84C5V1 BZX84C5V6 BZX84C6V2 BZX84C6V8 BZX84C7V5 BZX84C8V2 BZX84C9V1 BZX84C10 BZX84C11 BZX84C12 BZX84C13 BZX84C15 BZX84C16 BZX84C18 BZX84C20 BZX84C22 B | Shanghai Lunsure Electronic Tech | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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Número de pieza | Descripción | Fabricantes | |
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