Datasheet BFY50 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BFY50	SILICON PLANAR TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Vol	CDIL	transistor
2	BFY50	SILICON PLANAR TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Vol	CDIL	transistor
3	BFY50	GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @Ta = 25°C Derate above 25°C Total Device Dissipation (5>Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARA	Motorola Semiconductors	transistor
4	BFY50	NPN medium power transistors DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors Product speciﬁcation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product speciﬁcation NPN medium power transistors FEATURES • High	NXP Semiconductors	transistor
5	BFY50	MEDIUM POWER AMPLIFIER BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I	STMicroelectronics	amplifier

BFY Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BFY180	NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006 BFY 180 Micro	Siemens Semiconductor Group	transistor
2	BFY180	HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va	Infineon Technologies AG	transistor
3	BFY180ES	HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va	Infineon Technologies AG	transistor
4	BFY180H	HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va	Infineon Technologies AG	transistor
5	BFY180P	HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va	Infineon Technologies AG	transistor
6	BFY180S	HiRel NPN Silicon RF Transistor BFY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Va	Infineon Technologies AG	transistor
7	BFY181	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 561	Siemens Semiconductor Group	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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