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PDF MCD72-14io8B Data sheet ( Hoja de datos )
| Número de pieza | MCD72-14io8B | |
| Descripción | Thyristor Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Thyristor Module
Phase leg
Part number
MCD72-14io8B
3 1 52
MCD72-14io8B
VRRM
I TAV
VT
= 2x 1400 V
= 85 A
= 1.34 V
Backside: isolated
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: TO-240AA
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
1 page  
MCD72-14io8B
Thyristor
2500
2000
ITSM
IFSM
1500
[A]
1000
50 Hz, 80% VRRM
TVJ = 45°C
TVJ = 125°C
500
105
VR = 0 V
I2t
104
[A2s]
TVJ = 45°C
TVJ = 125°C
250
200
150
ITAVM
[A]
100
50
DC
180° sin
120°
60°
30°
0
10-3
10-2
10-1
100
101
t [s]
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
103
1 2 3 6 8 10
t [ms]
Fig. 2 I2t versus time (1-10 ms)
250
200
150
PT
100
[W]
50
DC
180° sin
120°
60°
30°
RthJA
[K/W]
0.4
0.6
0.8
1
1.2
1.5
2
3
0
0 50 100 150 0 50 100 150
ITAVM, IFAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)
0
0 50 100 150
TC [°C]
Fig. 3 Maximum forward current
at case temperature
100
tp = 30 µs
tp = 500 µs
PGM = 120 W
VG
10
PGAV =
60 W
8W
[V]
1
0.1
I
GD
IGT (TVJ = -40°C)
IGT (TVJ = 0°C)
IGT (TVJ = 25°C)
0.01 0.1 1 10
IG [A]
Fig. 5 Gate trigger characteristics
1200
1200
800
Ptot
600
[W]
400
200
Circuit
B6
3x MCC72 or
3x MCD72
RthKA
[K/W]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
100
10
tgd
[µs]
1
0.1
T
VJ
=
25°C
limit
typ.
0
0 100 200 300 0
IdAVM [A]
50 100
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
150
0.01 0.1
1
IG [A]
Fig. 7 Gate trigger delay time
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MCD72-14io8B.PDF ] | |
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