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PDF BST16 Data sheet ( Hoja de datos )
| Número de pieza | BST16 | |
| Descripción | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – FEBRUARY 1996
7
FEATURES
* High VCEO
* Low saturation voltage
BST16
C
COMPLEMENTARY TYPE – BST39
PARTMARKING DETAIL – BT2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
C
B
SOT89
E
VALUE
-350
-300
-4
-1
-500
1
-65 to +150
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -350
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -300
V IC=-1mA
Emitter-Base
Breakdown Voltage
V(BR)EBO -4
V IE=-100µA
Collector Cut-Off
Current
ICBO
-1 µA VCB=-280V
Collector Cut-Off
Current
ICEO
-50 µA
VCB=-250V
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Static Forward Current hFE
Transfer Ratio
30
-20
- 2.0
-0.5
150
µA
V
V
VEB=-4V
IC=-50mA, IB=-5mA*
IC=-30mA, IB=-3mA*
IC=-50mA, VCE=-10V*
Transition Frequency fT
15
MHz
IC=-10mA, VCE=-10V*
f = 30MHz
Output Capacitance
Cobo
15 pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA92 datasheet.
VCB=-10V, f=1MHz
3 - 76
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BST16.PDF ] | |
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