|
|
Número de pieza | BC490 | |
Descripción | High Current Transistors | |
Fabricantes | Motorola Inc | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BC490 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC490/D
High Current Transistors
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
–80
Vdc
VCBO
–80
Vdc
VEBO
–4.0
Vdc
IC –0.5 Adc
PD 625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watt
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –60 Vdc, IE = 0)
ON CHARACTERISTICS*
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
DC Current Gain
(IC = –10 mAdc, VCE = –2.0 Vdc)
(IC = –100 mAdc, VCE = –2.0 Vdc)
(IC = –1.0 Adc, VCE = –5.0 Vdc)
BC490
BC490A
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
hFE
Min
–80
–80
–4.0
—
40
60
100
15
BC490,A
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
—
–100
nAdc
——
— 400
140 250
——
—
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
1 page –1.0
TJ = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.6
VBE(on) @ VCE = –1.0 V
–0.4
–0.2
VCE(sat) @ IC/IB = 10
0
–0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100 –200
IC, COLLECTOR CURRENT (mA)
–500
Figure 11. “On” Voltages
BC490,A
–1.0
TJ = 25°C
–0.8
–0.6
IC = –10 mA
–50
mA
–100 mA
–250 mA –500 mA
–0.4
–0.2
0
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0 –5.0
IB, BASE CURRENT (mA)
–10 –20
Figure 12. Collector Saturation Region
–50
–0.8
–1.2
–1.6
–2.0 RθVB for VBE
–2.4
–2.8
–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (mA)
–500
Figure 13. Base–Emitter Temperature Coefficient
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BC490.PDF ] |
Número de pieza | Descripción | Fabricantes |
BC490 | High Current Transistors | Motorola Inc |
BC490 | High Current Transistors | ON Semiconductor |
BC490 | PNP SILICON PLANAR EPITAXIAL TRANSISTOR | Micro Electronics |
BC490A | High Current Transistors | Motorola Inc |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |