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Número de pieza | 2SJ387S | |
Descripción | Silicon P-Channel MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SJ387S (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! 2SJ387(L), 2SJ387(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• Low drive current
• 2.5 V Gate drive device can be driven from 3 V Source
• Suitable for Switching regulator, DC - DC converter
Outline
DPAK-2
4
4
123
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S
1 page 2SJ387(L), 2SJ387(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
–0.2
I D = –5 A
–0.1 –2 A
–1 A
0 –2 –4 –6 –8 –10
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = –2.5 V
–4 V
0.02
0.01
–0.5 –1 –2 –5 –10 –20
Drain Current I D (A)
–50
Static Drain to Source on State Resistance
vs. Temperature
0.2
Pulse Test
0.16
0.12
0.08
VGS = –2.5 V
I D = –5 A
–1, –2 A
–5 A
0.04
–4 V
–1 A –2 A
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10 25 °C
5
75 °C
2
1
0.5
–0.1 –0.2 –0.5 –1
Drain Current
V DS = –10 V
Pulse Test
–2 –5 –10
I D (A)
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet 2SJ387S.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SJ387 | Silicon P-Channel MOS FET | Hitachi Semiconductor |
2SJ387L | Silicon P-Channel MOS FET | Hitachi Semiconductor |
2SJ387S | Silicon P-Channel MOS FET | Hitachi Semiconductor |
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