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PDF 2SD2550 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2550 | |
| Descripción | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SD2550
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD2550
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV
l High Voltage
: VCBO = 1700 V
l Low Saturation Voltage : VCE (sat) = 5.0 V (Max.)
l High Speed
: tf = 0.6 µs (Max.)
l Bult-in Damper Type
l Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1700
600
5
4
8
2
50
150
−55~150
UNIT
V
V
V
A
A
W
°C
°C
EQUIVALENT CIRCUIT
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
Collector Cut−off Current
Emitter Cut−off Current
Emitter−Base Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Forward Voltage (Damper Diode)
Transition Frequency
Collector Output Capacitance
Switching Time
Storage Time
Fall Time
SYMBOL
TEST CONDITION
ICBO
IEBO
V (BR) EBO
hFE
VCE (sat)
VBE (sat)
VF
fT
Cob
tstg
tf
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 400 mA, IB = 0
VCE = 5 V, IC = 1 A
IC = 3 A, IB = 0.8 A
IC = 3 A, IB = 0.8 A
IF = 4 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 3 A, IB1 (end) = 0.8 A
fH = 15.75 kHz
1
MIN TYP. MAX UNIT
――
1 mA
66 ― 200 mA
5 ―― V
8 ― 22 ―
―5 8 V
― ― 1.2 V
― 1.5 2.0 V
― 3 ― MHz
― 85 ― pF
― 7.5 10
µs
― 0.3 0.6
2001-08-21
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SD2550.PDF ] | |
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