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PDF SI9435BDY-T1 Data sheet ( Hoja de datos )
| Número de pieza | SI9435BDY-T1 | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
P-Channel 30-V (D-S) MOSFET
Si9435BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.042 @ VGS = −10 V
−30 0.055 @ VGS = −6 V
0.070 @ VGS = −4.5 V
ID (A)
−5.7
−5.0
−4.4
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si9435BDY
Si9435BDY-T1 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFET
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS −30
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
−5.7
−4.1
−4.6
−3.2
−30
−2.3
−1.1
2.5 1.3
1.6 0.8
−55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
70
24
Maximum
50
95
30
Unit
V
A
W
_C
Unit
_C/W
Document Number: 72245
S-32274—Rev. B, 03-Nov-03
www.vishay.com
1
1 page  
New Product
Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
70_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72245
S-32274—Rev. B, 03-Nov-03
www.vishay.com
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