(PDF) SI4967DY Datasheet - Dual P-Channel 1.8-V (G-S) MOSFET

Número de pieza	SI4967DY
Descripción	Dual P-Channel 1.8-V (G-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! Si4967DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.023 @ VGS = - 4.5 V - 12 0.030 @ VGS = - 2.5 V 0.045 @ VGS = - 1.8 V ID (A) - 7.5 - 6.7 - 5.4 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4967DY Si4967DY-T1 (with Tape and Reel) S1 G1 S2 G2 D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS - 12 "8 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg - 7.5 - 6.1 - 30 - 1.7 2.0 1.3 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board. b. t v10 sec. Document Number: 70813 S-31989—Rev. C, 13-Oct-03 t v 10 sec Steady State Symbol RthJA Typical 93 Maximum 62.5 Unit _C/W www.vishay.com 1 1 page

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PDF SI4967DY Data sheet ( Hoja de datos )