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Número de pieza | PTF10133 | |
Descripción | 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor | |
Fabricantes | Ericsson | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PTF10133 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! PTF 10133
85 Watts, 860–960 MHz
GOLDMOS™ Field Effect Transistor
Description
The PTF 10133 is an internally matched 85 watt LDMOS FET
intended for cellular, GSM and D-AMPS applications. This device
operates at 50% efficiency with 13.5 dB of gain. Full gold metallization
ensures excellent device lifetime and reliability.
Typical Output Power vs. Input Power
120 60
Ef f ic iency
100 50
80 40
60
VDD = 28.0 V
30
IDQ = 1.0 A
40
f = 894 MHz
20
20
0
0
Output Pow er
1 23 45
Input Power (Watts)
10
0
6
• INTERNALLY MATCHED
• Performance at 894 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 50% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability
A-121304516939347
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 1.0 A, f = 894 MHz)
Drain Efficiency
(VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz
—all phase angles at frequency of test)
All published data at TCASE = 25°C unless otherwise indicated.
Symbol Min
Gps
P-1dB
h
Y
12.5
85
45
—
Typ
13.5
90
50
—
Max Units
— dB
— Watts
—%
10:1 —
e
1
1 page e
Test Circuit
PTF 10133
Test Circuit Schematic for f = 894 MHz
DUT
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
PTF 10133
0.040 l 894 GHz
0.096 l 894 GHz
0.098 l 894 GHz
0.073 l 894 GHz
0.107 l 894 GHz
0.110 l 894 GHz
0.250 l 894 GHz
0.081 l 894 GHz
0.178 l 894 GHz
0.040 l 894 GHz
LDMOS Field Effect Transistor
Microstrip 50 W
Microstrip 50 W
Microstrip 50 W
Microstrip 9.29 W
Microstrip 9.29 W
Microstrip 6.98 W
Microstrip 77.9 W
Microstrip 6.98 W
Microstrip 50 W
Microstrip 50 W
C1, C3, C5, C10
C2
C4
C6
C7
C8
C9
R1, R2, R3
Circuit Board
Circuit Board
Capacitor, 36 pF
ATC 100 B
Capacitor, 4.3 pF
ATC 100 B
Capacitor, 6.2 pF
ATC 100 B
Capacitor, 0.1 mF, 50 V Digi-Key P4525-ND
Capacitor, 100 mF, 50 V Digi-Key P5182-ND
Capacitor, 2.0 pF
ATC 100 B
Capacitor, 0.6-6 pF
ATC 100 B
Resistor, 220 W
Digi-Key 1KQBK
er = 4.0, .028 Dielectric Thickness, 1 Oz.
e.028" Dielectric Thickness, r = 4.0,
AlliedSignal, G200, 2 oz. copper
Components Layout (not to scale)
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet PTF10133.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTF10133 | 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor | Ericsson |
PTF10134 | 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor | Ericsson |
PTF10135 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor | Ericsson |
PTF10136 | 6 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor | Ericsson |
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