PDF LS5912C Data sheet ( Hoja de datos )

Número de pieza	LS5912C
Descripción	IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET
Fabricantes	Linear Integrated Systems
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No Preview Available ! LS5911 LS5912 LS5912C Linear Integrated Systems IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE (10kHz) en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) ABSOLUTE MAXIMUM RATINGS1 gfs ≥ 4000µS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation (Total) 500mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -25V Gate to Source -25V TO-71 BOTTOM VIEW G1 3 D1 2 S1 1 5 S2 6 D2 7 G2 TO-78 BOTTOM VIEW SOT-23 TOP VIEW G1 3 D1 2 G1 1 5 S2 D1 2 6 D2 S1 3 6 S2 5 D2 4 G2 S1 1 7 G2 PDIP-A S1 1 8 G2 D1 2 7 SS SS 3 6 D2 G1 4 5 S2 SOIC-A S1 1 D1 2 SS 3 G1 4 8 G2 7 SS 6 D2 5 S2 PDIP-B S1 1 8 NC D1 2 7 G2 G1 3 6 D2 NC 4 5 S2 SOIC-B S1 1 D1 2 G1 3 NC 4 8 NC 7 G2 6 D2 5 S2 MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC VGS1 − VGS2 ∆ VGS1 − VGS2 ∆T IDSS1 IDSS2 Differential Gate to Source Cutoff Voltage Differential Gate to Source Cutoff Voltage Change with Temperature Gate to Source Saturation Current Ratio TYP LS5911 LS5912 LS5912C UNIT MIN MAX MIN MAX MIN MAX 10 15 40 mV 20 40 40 µV/°C 0.95 1 0.95 1 0.95 1 % IG1 − IG2 Differential Gate Current 20 20 20 nA gfs1 gfs2 CMRR Forward Transconductance Ratio2 Common Mode Rejection Ratio 0.95 1 0.95 1 0.95 1 85 % dB CONDITIONS VDG = 10V, ID = 5mA VDG = 10V, ID = 5mA TA = -55 to +125°C VDS = 10V, VGS = 0V VDG = 10V, ID = 5mA TA = +125°C VDS = 10V, ID = 5mA f = 1kHz VDG = 5V to 10V ID = 5mA STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP LS5911 LS5912 LS5912C UNIT MIN MAX MIN MAX MIN MAX BVGSS Gate to Source Breakdown Voltage -25 -25 -25 VGS(off) Gate to Source Cutoff Voltage -1 -5 -1 -5 -1 -5 V VGS(F) Gate to Source Forward Voltage 0.7 VGS Gate to Source Voltage IDSS Drain to Source Saturation Current3 -0.3 -4 -0.3 -4 -0.3 -4 7 40 7 40 7 40 mA IGSS Gate Leakage Current IG Gate Operating Current -1 -50 -50 -50 pA -1 -50 -50 -50 CONDITIONS IG = -1µA, VDS = 0V VDS = 10V, ID = 1nA IG = 1mA, VDS = 0V VDG = 10V, IG = 5mA VDS = 10V, VGS = 0V VGS = -15V, VDS = 0V VDG = 10V, ID = 5mA Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 1 page

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