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Número de pieza | PHP4N40E | |
Descripción | PowerMOS transistors Avalanche energy rated | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PHP4N40E (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP4N40E, PHB4N40E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 400 V
ID = 4.4 A
RDS(ON) ≤ 1.8 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHP4N40E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB4N40E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN DESCRIPTION
1 gate
tab
tab
2 drain 1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
400
400
± 30
4.4
2.7
18
83
150
UNIT
V
V
V
A
A
A
W
˚C
December 1998
1
Rev 1.200
1 page Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
10 ID, Drain current (Amps)
VDS > ID x RDS(on)max
8
6
4
PHP4N40
Tj = 25 C
Tj = 150 C
2
0
02468
VGS, Gate-Source voltage (Volts)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
10
gfs, Transconductance (S)
4
VDS > ID x RDS(on)max
3
2
PHP4N40
Tj = 25 C
150 C
1
0
0 2 4 6 8 10
ID, Drain current (A)
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
a
2
Normalised RDS(ON) = f(Tj)
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 2.2 A; VGS = 10 V
Product specification
PHP4N40E, PHB4N40E
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
01234
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
1000 Junction capacitances (pF)
100
10
Ciss
PHP4N40
Coss
Crss
1
1 10 100
VDS, Drain-Source voltage (Volts)
1000
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
December 1998
5
Rev 1.200
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet PHP4N40E.PDF ] |
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