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PDF PHP83N03LT Data sheet ( Hoja de datos )
| Número de pieza | PHP83N03LT | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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PHP83N03LT; PHB83N03LT;
PHE83N03LT
N-channel TrenchMOS transistor
Rev. 01 — 23 January 2001
Product specification
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP83N03LT in a SOT78 (TO-220AB)
PHB83N03LT in a SOT404 (D2-PAK)
PHE83N03LT in a SOT226 (I2-PAK).
2. Features
s Low on-state resistance
s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters
c
4. Pinningc information
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
mb
2 drain (d)
[1]
mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
123
MBK112
SOT226 (I2-PAK)
Symbol
g
MBB076
d
s
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Phillips Electronics.
1 page  
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 25 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±5 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 A
Tj = 25 °C
gfs forward transconductance
Qg(tot) total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr turn-on rise time
td(off)
turn-off delay time
tf turn-off fall time
Source-drain diode
VDS = 25 V; ID = 30 A; Figure 11
ID = 30 A; VDD = 15 V; VGS = 5 V; Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12
VDD = 15 V; ID = 1 A; VGS = 10 V; RG = 6 Ω;
resistive load
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 13
IS = 40 A; VGS = 0 V
Min Typ Max Unit
25 − − V
22 − − V
1 1.5 2 V
0.5 − − V
− − 2.3 V
− 0.05 10 µA
− − 500 µA
− 10 100 nA
− 10 12 mΩ
− 17 20.5 mΩ
− 6.5 9 mΩ
− 55 − S
− 33 − nC
− 7 − nC
− 12.5 − nC
− 1660 − pF
− 590 − pF
− 380 − pF
− 9 20 ns
− 14 30 ns
− 75 95 ns
− 60 80 ns
− 0.9 1.2 V
− 0.95 − V
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
5 of 15
5 Page 
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
Plastic single-ended package; low-profile 3 lead TO-220AB
SOT226
D1 E
D
L2
b1
L
L1
123
ee
b
A
A1
mounting
base
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 c
D D1 E
e
mm
4.5 1.40 0.9
4.1 1.27 0.7
1.3 0.7
1.0 0.4
9.65
8.65
1.5
1.1
10.3
9.7
2.54
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
IEC
SOT226
REFERENCES
JEDEC
low-profile
3-lead TO-220AB
EIAJ
L
15.0
13.5
L1
3.30
2.79
L2(1)
max
3.0
Q
2.6
2.2
EUROPEAN
PROJECTION
ISSUE DATE
99-05-27
99-09-13
Fig 17. SOT226 (I2-PAK)
9397 750 07815
Product specification
Rev. 01 — 23 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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