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PDF MJW21192 Data sheet ( Hoja de datos )
| Número de pieza | MJW21192 | |
| Descripción | 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MJW21192 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJW21192/D
Complementary Silicon Plastic
Power Transistors
Specifically designed for power audio output, or high power drivers in audio
amplifiers.
• DC Current Gain Specified up to 8.0 Amperes at Temperature
• All On Characteristics at Temperature
• High SOA: 20 A, 18 V, 100 ms
• TO–247AE Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Symbol
RθJC
RθJA
MJW21191
MJW21192
150
150
5.0
8.0
16
2.0
100
0.65
– 65 to + 150
Max
0.65
50
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C/W
1000
NPN
100
PNP
NPN
MJW21192
PNP
MJW21191
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY
SILICON
150 VOLTS
100 WATTS
CASE 340K–01
TO–247AE
10
1.0
1.0
10 100
VR, REVERSE VOLTAGE (V)
Figure 1. Typical Capacitance @ 25°C
1000
©MMoototorroollaa, IBncip. 1o9la97r Power Transistor Device Data
1
1 page  
NPN — MJW21192
10
MJW21192 MJW21191
PNP — MJW21191
10
1.0
25°C
50°C
100°C
0.1
0.001
0.01 0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 13. NPN — MJW21192
VCE = 2.0 V VBE(on) Curve
1.0
25°C
50°C
100°C
0.1
10 0.001
SPACE
0.01 0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 14. PNP — MJW21191
VCE = 2.0 V VBE(on) Curve
10
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MJW21192.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MJW21191 | 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS | Motorola Semiconductors |
| MJW21191 | POWER TRANSISTORS COMPLEMENTARY SILICON |  ON |
| MJW21191 | SILICON POWER TRANSISTOR |  SavantIC |
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