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PDF 2SK3479 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3479 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3479
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3479 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A)
• Low Ciss: Ciss = 11000 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3479
TO-220AB
2SK3479-S
TO-262
2SK3479-ZJ
2SK3479-Z
TO-263
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±83
±332
Total Power Dissipation (TC = 25°C)
PT1
125
Total Power Dissipation (TA = 25°C)
PT2
1.5
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS 65
EAS 422
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15077EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
©
2000, 2001
1 page  
2SK3479
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
20
VGS = 4.5 V
15
10 V
10
5
ID = 42 A
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
100000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
100
0.1
Crss
1 10 100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1.0 10 100
IF - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100 VGS = 10 V
10
0V
1
0.10 0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1000
100
10
SWITCHING CHARACTERISTICS
tf
td(off)
td(on)
tr
VDD = 50 V
VGS = 10 V
1 RG = 0 Ω
0.1
1
10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
160 16
120
VDD = 80 V
80 50 V
20 V
12
VGS 8
40 4
VDS ID = 83 A
00
50 100 150 200 250
QG - Gate Charge - nC
Data Sheet D15077EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3479.PDF ] | |
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