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Número de pieza | UPD44324185 | |
Descripción | (UPD44324xx5) 36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION | |
Fabricantes | NEC | |
Logotipo | ||
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PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44324085, 44324095, 44324185, 44324365
36M-BIT DDRII SRAM SEPARATE I/O
2-WORD BURST OPERATION
Description
The µPD44324085 is a 4,194,304-word by 8-bit, the µPD44324095 is a 4,194,304-word by 9-bit, the µPD44324185 is a
2,097,152-word by 18-bit and the µPD44324365 is a 1,048,576-word by 36-bit synchronous double data rate static RAM
fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The µPD44324085, µPD44324095, µPD44324185 and µPD44324365 integrate unique synchronous peripheral circuitry
and a burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K
and /K.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration.
These products are packaged in 165-pin PLASTIC FBGA.
Features
• 1.8 ± 0.1 V power supply and HSTL I/O
• DLL circuitry for wide output data valid window and future frequency scaling
• Separate independent read and write data ports
• DDR read or write operation initiated each cycle
• Pipelined double data rate operation
• Separate data input/output bus
• Two-tick burst for low DDR transaction size
• Two input clocks (K and /K) for precise DDR timing at clock rising edges only
• Two output clocks (C and /C) for precise flight time and clock skew matching-clock
and data delivered together to receiving device
• Internally self-timed write control
• Clock-stop capability with µs restart
• User programmable impedance output
• Fast clock cycle time : 3.3 ns (300 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
• Simple control logic for easy depth expansion
• JTAG boundary scan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M16782EJ1V0DS00 (1st edition)
Date Published October 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2003
1 page µPD44324085, 44324095, 44324185, 44324365
165-pin PLASTIC FBGA (13 x 15)
(Top View)
[µPD44324185F5-EQ2]
1 2 3 4 5 6 7 8 9 10 11
A /CQ
VSS
A R, /W /BW1 /K
NC /LD
A
VSS CQ
B NC Q9 D9 A NC K /BW0 A NC NC Q8
C NC
NC D10 VSS
A
A
A VSS NC Q7 D8
D NC D11 Q10 VSS VSS
VSS
VSS
VSS
NC
NC
D7
E NC
NC
Q11
VDDQ
VSS
VSS
VSS VDDQ NC
D6
Q6
F NC
Q12
D12 VDDQ
VDD
VSS
VDD VDDQ NC
NC
Q5
G NC
D13
Q13 VDDQ
VDD
VSS
VDD VDDQ NC
NC
D5
H /DLL
VREF
VDDQ VDDQ
VDD
VSS
VDD
VDDQ VDDQ
VREF
ZQ
J NC
NC
D14
VDDQ
VDD
VSS
VDD VDDQ NC
Q4
D4
K NC
NC
Q14
VDDQ
VDD
VSS
VDD VDDQ NC
D3
Q3
L NC
Q15
D15 VDDQ
VSS
VSS
VSS VDDQ NC
NC
Q2
M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2
N NC
D17 Q16
VSS
A
A
A VSS NC NC D1
P NC
NC Q17
A
A
C
A
A NC D0 Q0
R TDO TCK
A
A
A /C
A
A
A TMS TDI
A
D0 to D17
Q0 to Q17
/LD
R, /W
/BW0, /BW1
K, /K
C, /C
CQ, /CQ
ZQ
/DLL
: Address inputs
: Data inputs
: Data outputs
: Synchronous load
: Read Write input
: Byte Write data select
: Input clock
: Output clock
: Echo clock
: Output impedance matching
: DLL disable
TMS
TDI
TCK
TDO
VREF
VDD
VDDQ
VSS
NC
: IEEE 1149.1 Test input
: IEEE 1149.1 Test input
: IEEE 1149.1 Clock input
: IEEE 1149.1 Test output
: HSTL input reference input
: Power Supply
: Power Supply
: Ground
: No connection
Remarks 1. Refer to Package Drawing for the index mark.
2. 2A and 10A are expansion addresses: 10A for 72Mb and 2A for 144Mb.
Preliminary Data Sheet M16782EJ1V0DS
5
5 Page µPD44324085, 44324095, 44324185, 44324365
Byte Write Operation
[µPD44324085]
Operation
Write D0 to D7
Write D0 to D3
Write D4 to D7
Write nothing
K
L→H
–
L→H
–
L→H
–
L→H
–
/K
–
L→H
–
L→H
–
L→H
–
L→H
Remark H : High level, L : Low level, → : rising edge.
/NW0
0
0
0
0
1
1
1
1
/NW1
0
0
1
1
0
0
1
1
[µPD44324095]
Operation
Write D0 to D8
Write nothing
K
L→H
–
L→H
–
/K
–
L→H
–
L→H
Remark H : High level, L : Low level, → : rising edge.
/BW0
0
0
1
1
[µPD44324185]
Operation
Write D0 to D17
Write D0 to D8
Write D9 to D17
Write nothing
K
L→H
–
L→H
–
L→H
–
L→H
–
/K
–
L→H
–
L→H
–
L→H
–
L→H
Remark H : High level, L : Low level, → : rising edge.
/BW0
0
0
0
0
1
1
1
1
/BW1
0
0
1
1
0
0
1
1
[µPD44324365]
Operation
Write D0 to D35
Write D0 to D8
Write D9 to D17
Write D18 to D26
Write D27 to D35
Write nothing
K
L→H
–
L→H
–
L→H
–
L→H
–
L→H
–
L→H
–
/K
–
L→H
–
L→H
–
L→H
–
L→H
–
L→H
–
L→H
Remark H : High level, L : Low level, → : rising edge.
/BW0
0
0
0
0
1
1
1
1
1
1
1
1
/BW1
0
0
1
1
0
0
1
1
1
1
1
1
Preliminary Data Sheet M16782EJ1V0DS
/BW2
0
0
1
1
1
1
0
0
1
1
1
1
/BW3
0
0
1
1
1
1
1
1
0
0
1
1
11
11 Page |
Páginas | Total 32 Páginas | |
PDF Descargar | [ Datasheet UPD44324185.PDF ] |
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