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Datasheet NX7661JB-BC Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NX7661JB-BC | InGaAsP MQW FP PULSED LASER DIODE
NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN)
FEATURES
• HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% • LONG WAVELENGTH: λC = 1625 nm • INTERNAL THERMOELECTRIC COOLE | CEL | diode |
NX7 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NX70 | Serial Communication Unit ( )
NX70/NX700 Serial Communications Unit (SCU) User Manual
Important User Information
Solid state equipment has operational characteristics differing from those of electromechanical equipment. Because of these differences, and also because of t Samsung data | | |
2 | NX700 | Serial Communication Unit ( )
NX70/NX700 Serial Communications Unit (SCU) User Manual
Important User Information
Solid state equipment has operational characteristics differing from those of electromechanical equipment. Because of these differences, and also because of t Samsung data | | |
3 | NX7002AK | MOSFET, Transistor NX7002AK
13 February 2013
SO T2 3
60 V, single N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and bene NXP Semiconductors mosfet | | |
4 | NX7002AKS | MOSFET, Transistor NX7002AKS
60 V, dual N-channel Trench MOSFET
Rev. 1 — 1 March 2012 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology NXP Semiconductors mosfet | | |
5 | NX7002AKW | MOSFET, Transistor NX7002AKW
11 July 2012
60 V, single N-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features a NXP Semiconductors mosfet | | |
6 | NX7002BK | N-channel Trench MOSFET SOT23
NX7002BK
60 V, N-channel Trench MOSFET
12 May 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic- NXP Semiconductors mosfet | | |
7 | NX7002BKM | N-channel Trench MOSFET SOT883
NX7002BKM
60 V, N-channel Trench MOSFET
3 December 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features NXP Semiconductors mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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