(PDF) SIGC68T170R3 Datasheet

Número de pieza	SIGC68T170R3
Descripción	IGBT Chip
Fabricantes	Infineon Technologies
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No Preview Available ! www.DataSheet4U.com IGBT3 Chip SIGC68T170R3 FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • power module Applications: • drives C G E Chip Type SIGC68T170R3 VCE ICn Die Size 1700V 50A 8.23 x 8.25 mm2 Package Ordering Code sawn on foil Q67050- A4147-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 8.23 x 8.25 mm 4 x ( 2.94 x 2.97 ) 1.18 x 1.09 67.9 / 49.9 mm2 190 µm 150 mm 90 grd 204 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 7761-A, Edition 2, 04.09.03 1 page

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PDF SIGC68T170R3 Data sheet ( Hoja de datos )