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Número de pieza | LNA2802L | |
Descripción | GaAs Infrared Light Emitting Diode | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LNA2802L (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Infrared Light Emitting Diodes
LNA2802L
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
λP = 940 nm (typ.)
Good radiant power output linearity with respect to input current
Long lifetime, high reliability
ø3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 75
IF 50
IFP* 1
VR 3
Topr –25 to +85
Tstg – 40 to +100
Unit
mW
mA
A
V
˚C
˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
0.5±0.1
2.54
12
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between terminals
Half-power angle
Symbol
PO
λP
∆λ
VF
IR
Ct
θ
Conditions
IF = 50mA
IF = 50mA
IF = 50mA
IF = 50mA
VR = 3V
VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
min typ max Unit
2.5 5
mW
940 nm
50 nm
1.3 1.5
V
10 µA
35 pF
20 deg.
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet LNA2802L.PDF ] |
Número de pieza | Descripción | Fabricantes |
LNA2802L | GaAs Infrared Light Emitting Diode | Panasonic Semiconductor |
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