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PDF SIA414DJ Data sheet ( Hoja de datos )
| Número de pieza | SIA414DJ | |
| Descripción | Dual N-Channel 8-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
N-Channel 8-V (D-S) MOSFET
SiA414DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.011 at VGS = 4.5 V
0.013 at VGS = 2.5 V
8 0.016 at VGS = 1.8 V
0.022 at VGS = 1.5 V
0.041 at VGS = 1.2 V
PowerPAK SC-70-6L-Single
D
6
D
5
2.05 mm S
4
1
D
2
D
3
G
S
2.05 mm
ID (A)a
12
12
12
12
12
Qg (Typ)
19 nC
FEATURES
• TrenchFET® Power MOSFET
• New Thermally Enhaced PowerPAK®
SC70 Package
- Small Footprint Area
APPLICATIONS
• Load Switch for Portable Applications
RoHS
COMPLIANT
D
Marking Code
Part # code
ACX
XXX
Lot Traceability
and Date code
Ordering Information: SiA414DJ-T1-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
8
±5
12a
12a
12a, b, c
11.6b, c
40
12a
2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 5 sec
Steady State
RthJA
RthJC
28
5.3
36 °C/W
6.5
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 73954
S-71323-Rev. A, 02-Jul-07
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40 20
35
30 15
25
20 10
15 Package Limited
10 5
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
SiA414DJ
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73954
S-71323-Rev. A, 02-Jul-07
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIA414DJ.PDF ] | |
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