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PDF BU508DF Data sheet ( Hoja de datos )
| Número de pieza | BU508DF | |
| Descripción | NPN POWER TRANSISTORS | |
| Fabricantes | TRANSYS Electronics | |
| Logotipo |  |
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Transys
Electronics
LIMITED
NPN POWER TRANSISTORS
BU508F, BU508AF,
BU508DF
TO- 3P Fully Isolated
Plastic Package
B
www.DataSCheet4U.com
E
Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Total Power Dissipation upto Ta=25º C
Tc=25º C
Storage Temperature Range
Max Operating Junction Temperature
SYMBOL
VCES
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
VALUE
1500
700
5
8
15
34
60
- 65 to +150
150
UNIT
V
V
V
A
W
ºC
ºC
THERMAL RESISTANCE
Thermal Resistance Junction - Case
Rth (j-c)
2.08
ºC/W
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
.
DESCRIPTION
SYMBOL TEST CONDITIONS
Collector Cut off Current
Collector Emitter Sustaining Voltage
ICES
VCEO (sus)*
VCE=VCES, VBE=0
IB =0, IC=100mA
Emitter Base Voltage
VEBO
IE=10mA, IC =0
BU508F, AF
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
BU508DF
DC Current Gain
hFE IC=4.5A, VCE=5V
Diode forward Voltage
VF IF=4.0A
BU508DF
Collector Emitter Saturation Voltage
VCE(sat) *
IC=4.5A, IB=2.0A
BU508AF, DF
IC=4.5A, IB=2.0A
BU508F
Base Emitter Saturation Voltage
VBE(sat) *
IC=4.5A, IB=2.0A
MIN
700
5.0
2.25
SWITCHING TIME
Storage Time
Fall Time
ts IC=4.5A,hFE=2.5,VCC=140V
tf LC=0.9mH, LB=3µH
* Pulse test: Pulse Duration <300µs , Duty cycle < 1.5%.
TYP
7.0
0.5
MAX
1.0
300
2.0
1.0
5.0
1.5
UNIT
mA
V
V
mA
V
V
V
V
µs
µs
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BU508DF.PDF ] | |
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