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PDF SI4908DY Data sheet ( Hoja de datos )
| Número de pieza | SI4908DY | |
| Descripción | Dual N-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si4908DY
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
40
rDS(on) (W)
0.060 at VGS = 10 V
0.070 at VGS = 4.5 V
ID (A)a
5.0
4.7
Qg (Typ)
5.6
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S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4908DY-T1–E3 (Lead (Pb)–free)
FEATURES
D TrenchFETr Power MOSFET
D 100 % Rg Tested
APPLICATIONS
D CCFL Inverter
D1
RoHS
COMPLIANT
D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 _C)
Pulsed Drain Current (10 ms Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 _C
TC = 70 _C
TA = 25 _C
TA = 70 _C
TC = 25 _C
TA = 25 _C
L = 0.1 mH
TC= 25 _C
TC= 70 _C
TA = 25 _C
TA = 70 _C
VDS
VGS
ID
IDM
IS
ISM
IAS
EAS
PD
TJ, Tstg
40
"16
5
4.7
4.1b, c
3.3b, c
20
2.3
1.5b, c
20
7
2.5
2.75
1.75
1.85b, c
1.18b, c
–55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady-State
Notes
a. Based on TC = 25 _C.
b. Surface Mounted on 1” x 1” FR4 Board.
c. t = 10 sec.
d. Maximum under steady state conditions is 120 _C/W.
Document Number: 73698
S–60218—Rev. A, 20-Feb-06
Symbol
RthJA
RthJF
Typ
57
35
Max
67.5
45
Unit
_C/W
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TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Current De-Rating*
6
5
4
3
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2
1
0
0 25 50 75 100 125 150
TC – Case Temperature (_C)
Si4908DY
Vishay Siliconix
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Power De-Rating, Junction-to-Foot
25 50 75 100 125
TC – Case Temperature (_C)
150
Power De-Rating, Junction-to-Ambient
1.25
1.00
0.75
0.50
0.25
0.00
0
25 50 75 100 125
TC – Case Temperature (_C)
150
*The power dissipation Pb is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73698
S–60218—Rev. A, 20-Feb-06
www.vishay.com
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI4908DY.PDF ] | |
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