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PDF SIHFZ34S Data sheet ( Hoja de datos )
| Número de pieza | SIHFZ34S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
www.DataSheet4UC.coonmfiguration
60
VGS = 10 V
46
11
22
Single
I2PAK (TO-262)
D2PAK (TO-263)
0.050
D
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Advanced Process Technology
• Surface Mount
• Low-Profile Through-Hole (IRFZ34L/SiHFZ34L)
• 175 °C Operating Temperature
Available
RoHS*
COMPLIANT
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAKis a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to 2
W in a typical surface mount application.
The through-hole version (IRFZ34L/SiHFZ34L) is available
for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free
IRFZ34SPbF
SiHFZ34S-E3
SnPb
IRFZ34S
SiHFZ34S
Note
a. See device orientation.
D2PAK (TO-263)
IRFZ34STRRPbFa
SiHFZ34STRPbFa
IRFZ34STRRa
SiHFZ34STRa
D2PAK (TO-263)
IRFZ34STRLPbFa
SiHFZ34STLPbFa
IRFZ34STRLa
SiHFZ34STLa
I2PAK (TO-263)
IRFZ34LPbF
SiHFZ34L-E3
IRFZ34L
SiHFZ34L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
TA = 25 °C
VDS
VGS
ID
IDM
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 260 µH, RG = 25 Ω, IAS = 30 A (see fig. 12).
c. ISD ≤ 30 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ34/SiHFZ34 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
60
± 20
30
21
120
0.59
200
88
3.7
4.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
Document Number: 90368
S-Pending-Rev. A, 22-Jul-08
WORK-IN-PROGRESS
www.vishay.com
1
1 page  
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
www.DataSheet4U.com
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
Fig. 9 - Maximum Drain Current vs. Case Temperature
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 90368
S-Pending-Rev. A, 22-Jul-08
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SIHFZ34S.PDF ] | |
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