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PDF PHP193NQ06T Data sheet ( Hoja de datos )
| Número de pieza | PHP193NQ06T | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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PHP/PHB193NQ06T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 06 May 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Standard level threshold
s Very low on-state resistance.
1.3 Applications
s Motors, lamps, solenoids
s DC-to-DC converters
s Uninterruptible power supplies
s General industrial applications.
1.4 Quick reference data
s VDS ≤ 55 V
s Ptot ≤ 300 W
s ID ≤ 75 A
s RDSon ≤ 4 mΩ.
2. Pinning information
Table 1: Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 drain (d)
[1]
mb
mb
3 source (s)
mb mounting base;
connected to
drain (d)
g
MBB076
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
d
s
1 page  
Philips Semiconductors
PHP/PHB193NQ06Twww.DataSheet4U.com
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
IDSS drain-source leakage current
IGSS gate-source leakage current
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
RDSon drain-source on-state resistance
VGS = 10 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
Dynamic characteristics
Qg(tot)
Qgs
total gate charge
gate-source charge
ID = 25 A; VDD = 44 V; VGS = 10 V;
Figure 13
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 11
Crss
td(on)
tr
reverse transfer capacitance
turn-on delay time
rise time
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr recovered charge
Min Typ Max Unit
55 - - V
50 - - V
234V
1- - V
- - 4.4 V
- - 1 µA
- - 500 µA
- 2 100 nA
-
3.4 4
mΩ
-
6.8 8
mΩ
- 85.6 - nC
- 18.4 - nC
- 24.6 - nC
- 5082 - pF
- 1054 - pF
- 289 - pF
- 23 - ns
- 51 - ns
- 71 - ns
- 41 - ns
- 0.8 1.2 V
- 95 - ns
- 251 - nC
9397 750 13169
Product data
Rev. 01 — 06 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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Philips Semiconductors
8. Revision history
Table 6: Revision history
Rev Date
CPCN
Description
01 20040506 -
Product data (9397 750 13169).
PHP/PHB193NQ06Twww.DataSheet4U.com
N-channel TrenchMOS™ standard level FET
9397 750 13169
Product data
Rev. 01 — 06 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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