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PDF APTGT75DH60TG Data sheet ( Hoja de datos )
| Número de pieza | APTGT75DH60TG | |
| Descripción | Asymmetrical - Bridge Trench Field Stop IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGT75DH60TGwww.DataSheet4U.com
Asymmetrical - Bridge
Trench + Field Stop IGBT®
Power Module
Q1
G1
VBUS
VBUS SENSE
CR3
E1
OUT1 O UT2
CR2
0/VBUS SENSE
NTC1
0/V BU S
Q4
G4
E4
NT C2
VBUS
SENSE
VBUS
E1
G1
G4
E4
0/ VBUS
0/ VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VCES = 600V
IC = 75A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 150°C
Max ratings
600
100
75
140
±20
250
150A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT75DH60TGwww.DataSheet4U.com
Operating Frequency vs Collector Current
120
100
80 ZVS
VCE=300V
D=50%
RG=4.7Ω
TJ =150°C
Tc=85°C
60 ZCS
40
Hard
20 switching
0
0 20 40 60 80 100
IC (A)
Forward Characteristic of diode
150
125
100
75
50
25
0
0
TJ=125°C
TJ =150°C
TJ= 25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.2
Diode
1 0.9
0.8 0.7
0.6 0.5
0.4 0.3
0.2 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT75DH60TG.PDF ] | |
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