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PDF HMC519 Data sheet ( Hoja de datos )
| Número de pieza | HMC519 | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER 18 - 32 GHz | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.0904
HMC519
www.DataSheet4U.com
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
1
Typical Applications
Features
The HMC519 is ideal for use as either a LNA or driver
amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military & Space
Noise Figure: 2.8 dB
Gain: 15 dB
OIP3: 23 dBm
Single Supply: +3V @ 65 mA
50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC519 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier (LNA) which
covers the 18 to 32 GHz frequency range. The
HMC519 provides 15 dB of small signal gain, 2.8 dB
of noise figure and has an output IP3 greater than
23 dBm. The chip can easily be integrated into hy-
brid or MCM assemblies due to its small size. All data
is tested with the chip in a 50 Ohm test fixture con-
nected via 0.075 mm (3 mil) ribbon bonds of minimal
length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter
bondwires may also be used to make the RFIN and
RFOUT connections.
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
Min.
12
9
Typ.
18 - 28
15
0.015
2.8
13
12
12
15
23
65
Max.
0.025
3.5
Min.
11
10
Typ.
28 - 32
14
0.015
3.5
9
12
14
18
26
65
Max.
0.025
4.5
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
1 - 174
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
1
v00.0904
HMC519
www.DataSheet4U.com
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
Pad Descriptions
Pad Number
Function
1 RFIN
2, 3, 4
Vdd1, 2, 3
5
6, 7, 8
Die Bottom
RFOUT
G3, 2, 1
GND
Description
This pad is AC coupled and matched to
50 Ohms from 18 - 32 GHz.
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
This pad is AC coupled and matched to
50 Ohms from 18 - 32 GHz.
These pads must be connected to RF/DC
ground for proper operation.
Die Bottom must be connected to RF/DC ground.
Interface Schematic
Assembly Diagram
1 - 178
Note: G1, G2 and G3 must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC519.PDF ] | |
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