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Datasheet 2SC3512 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SC3512Silicon NPN Epitaxial

2SC3512 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC3512 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power diss
Hitachi Semiconductor
Hitachi Semiconductor
transistor
22SC3512Silicon NPN Epitaxial

2SC3512 Silicon NPN Epitaxial REJ03G0714-0300 Rev.3.00 Apr 20, 2006 Application UHF / VHF wide band amplifier Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector
Renesas
Renesas
transistor
32SC3512Silicon NPN RF Transistor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3512 DESCRIPTION ·Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MA
Inchange Semiconductor
Inchange Semiconductor
transistor


2SC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12SC0108T2Dx-xxDual Channel Ultra-compact Low-cost SCALE-2 Driver Core

2SC0108T2Dx-xx Preliminary 2SC0108T2Dx-xx Description & Application Manual Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core Abstract The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica
CT-Concept
CT-Concept
transistor
22SC0829Silicon NPN epitaxial planar type

DataSheet.in Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 • Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame
Panasonic Semiconductor
Panasonic Semiconductor
transistor
32SC0829Silicon NPN epitaxial planar type

DataSheet.in Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification 5.0±0.2 Unit: mm 4.0±0.2 • Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 0.7±0.1 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parame
Panasonic Semiconductor
Panasonic Semiconductor
transistor
42SC100NPN Transistor

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ETC
ETC
transistor
52SC1000(2SCxxx) Low Level and General Purpose Amplifiers

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Micro Electronics
Micro Electronics
transistor
62SC1000Silicon NPN Epitaxial Transistor

ETC
ETC
transistor
72SC1002Silicon NPN Power Transistors

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1002 DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and sym
SavantIC
SavantIC
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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