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PDF AP4525GEH-A-HF-3 Data sheet ( Hoja de datos )
| Número de pieza | AP4525GEH-A-HF-3 | |
| Descripción | Complementary N and P-channel Enhancement-mode Power MOSFETs | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4525GEH-A-HF-3
Complementary N and P-channel
Enhancement-mode Power MOSFETs
Simple Drive Requirement
Good Thermal Performance
Fast Switching Performance
RoHS-compliant, halogen-free
Description
D1/D2
N-CH
S1
G1
S2
G2
TO-252-4L
P-CH
BV DSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
40V
26mΩ
8.3A
-40V
40mΩ
-7A
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP4525GEH-A-HF-3 is in a four-lead TO-252 package, which is widely
used for commercial and industrial surface-mount applications, and is
well suited for applications such as DC and servo motor drives.
G1
D1
G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID at TA=25°C
ID at TA=70°C
IDM
PD at TA=25°C
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Rating
N-channel
P-channel
40 -40
±16 ±16
8.3 -7.0
6.6 -5.6
50 -50
3.125
0.025
-55 to 150
-55 to 150
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Value
8
40
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
°C/W
Ordering Information
AP4525GEH-A-HF-3TR RoHS-compliant TO-252-4L, shipped on tape and reel (3000 pcs/reel)
No longer recommended for new designs - use AP4543GEH-HF-3TR
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200706271-3 1/8
1 page  
Advanced Power
Electronics Corp.
AP4525GEH-A-HF-3
Typical N-channel Electrical Characteristics (cont.)
12
I D =6A
V DS =20V
f=1.0MHz
1000
C iss
8
C100
oss
C rss
4
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1
T A =25 o C
Single Pulse
0.1
0.1
1
1ms
10ms
100ms
1s
DC
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
50
V DS =5V
40
T j =25 o C
30
T j =150 o C
20
10
0
02468
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
t , Pulse Width (s)
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP4525GEH-A-HF-3.PDF ] | |
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