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Datasheet 1N6159US Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N6159US | Diode TVS Single Bi-Dir 38.8V 1.5KW 2-Pin SMD | New Jersey Semiconductor | diode |
2 | 1N6159US | Diode TVS Single Bi-Dir 38.8V 1.5KW 2-Pin SMD | New Jersey Semiconductor | diode |
3 | 1N6159US | Diode TVS Single Bi-Dir 38.8V 1.5KW 2-Pin SMD | New Jersey Semiconductor | diode |
4 | 1N6159US | Diode TVS Single Bi-Dir 38.8V 1.5KW 2-Pin SMD | New Jersey Semiconductor | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f Formosa MS diode | |
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Número de pieza | Descripción | Fabricantes | |
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