|
|
Datasheet BFX89 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BFX89 | HIGH FREQUENCY TRANSISTOR BFX89 BFY90
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Continuous Device Dissipation
<& TA = 25°C
Derate above 25°C Storage Temperature
Symbol v CEO v CBO VEBO
"C
PD
TStq
Value 15 30
2.5 50
200 1.14 - 65 to | Motorola Semiconductors | transistor |
2 | BFX89 | NPN SILICON RF TRANSISTORS BFX89 BFY90
NPN SILICON RF TRANSISTORS
CentralTM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are Silicon NPN Epitaxial Planar Transistors mounted in a hermetically sealed package designed for VHF/UHF amplifier, oscillator, and converter applications.
MARKING CODE: FUL | Central Semiconductor | transistor |
3 | BFX89 | WIDE BAND VHF/UHF AMPLIFIER This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
| STMicroelectronics | amplifier |
4 | BFX89 | NPN SILICON TRANSISTOR FOR RF BROADBAND AMPLIFIER | Siemens Semiconductor Group | transistor |
5 | BFX89 | WIDE BAND VHF/UHF AMPLIFIER BFX89 – BFY90 WIDE BAND VHF/UHF AMPLIFIER
DESCRIPTION :
• • • SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE
APPLICATIONS :
• • • TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONS
The BFX89 and BFY90 are silicon planar epitaxial NPN transistors pro | Comset Semiconductors | amplifier |
BFX Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BFX11 | DUAL AMPLIFIER TRANSISTOR MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
Value
Motorola Semiconductors transistor | | |
2 | BFX15 | DUAL AMPLIFIER TRANSISTOR BFX15
CASE 645-07, STYLE 1 DUAL
AMPLIFIER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25° Motorola Semiconductors transistor | | |
3 | BFX17 | Bipolar NPN Device BFX17
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (TO Seme LAB data | | |
4 | BFX29 | PNP SILICON EPITAXIAL TRANSISTOR Seme LAB transistor | | |
5 | BFX29 | (BFXxx) Medium Power Amplifiers Micro Electronics amplifier | | |
6 | BFX29 | Trans GP BJT PNP 60V 0.6A 3-Pin TO-39 New Jersey Semiconductor data | | |
7 | BFX30 | PNP SILICON PLANAR TRANSISTOR Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTOR
BFX30
TO-39 Metal Can Package
INTENDED FOR SWITCHING APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltag CDIL transistor | |
Esta página es del resultado de búsqueda del BFX89. Si pulsa el resultado de búsqueda de BFX89 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |