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Datasheet HFA2 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1HFA2SAFETY RELAY

=;64 E6;:FK D:?6K /D:?6K I>F= ;BD8>7?K 9:9 8BAF68FE0 Fad] Lg3?E689:6< Fad] Lg3?B675<:87=;55: ;PMZ[XPY + Kmdla [gflY[l YjjYf_]e]flk? 7 Fgje C .7X lqh]/1 6LM06LC .HD6 lqh]/1 6LM06LC .HD7 lqh]/ + Fgj[aZdq _ma\]\ [gflY[lk Y[[gj\af_ lg EL:575: + =A koal[`af_ [YhYZadalq + Ha_` afkmdYlagf [YhYZadalq
Hongfa Technology
Hongfa Technology		relay
2HFA200FA120PUltrafast Soft Recovery Diode

www.DataSheet.co.kr HFA200FA120P Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 200 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • UL approved f
Vishay Siliconix
Vishay Siliconix		diode
3HFA200MD40CUltrafast/ Soft Recovery Diode

PD-2.450 rev. B 01/99 HEXFRED Features HFA200MD40C Ultrafast, Soft Recovery Diode VR = 400V VF (typ.)ƒ = 0.9V IF(AV) = 200A Qrr (typ.) = 330nC IRRM(typ.) = 8.1A trr(typ.) = 45ns di(rec)M/dt (typ.)ƒ = 270A/µs LUG LUG LUG TERMINAL TERMINAL TERMINAL CATHODE ANODE 2 ANODE 1 TM • Reduced RFI and
International Rectifier
International Rectifier		diode
4HFA200MD40DUltrafast Soft Recovery Diode

PD-2.510 rev. A 02/99 HEXFRED Features HFA200MD40D TM Ultrafast, Soft Recovery Diode V R = 400V V F(typ.)ƒ = 0.9V IF(AV) = 200A Qrr (typ.) = 330nC IRRM(typ.) = 8.1A trr(typ.) = 45ns di(rec)M/dt (typ.)ƒ = 270A/µs • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recov
IRF
IRF		diode
5HFA20N50U500V N-Channel MOSFET

HFA20N50U HFA20N50U 500V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 58 nC (Typ.) ‰ Extended Safe Operating Area ‰
SemiHow
SemiHow		mosfet


HFA Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1HFA04TB60Ultrafast/ Soft Recovery Diode

Bulletin PD -2.399 rev. A 11/00 HFA04TB60 HEXFRED Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 1 CATHODE TM Ultrafast, Soft Recovery Diode BASE CATHODE VR = 600V VF = 1.8V 4 2 Qrr * = 40nC 3 ANODE 2 Benefits �
International Rectifier
International Rectifier		diode
2HFA04TB60SUltrafast/ Soft Recovery Diode

Bulletin PD -20614 rev. A 12/00 HFA04TB60S HEXFRED Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions TM Ultrafast, Soft Recovery Diode (K) BASE + 2 VR = 600V VF = 1.8V Qrr * = 40nC Benefits • Reduced RFI and EMI •
International Rectifier
International Rectifier		diode
3HFA04TB60SPBFSOFT RECOVERY DIODE

PD-96035 HFA04TB60SPbF HEXFRED Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free TM Ultrafast, Soft Recovery Diode (K) BASE + 2 VR = 600V VF = 1.8V Qrr * = 40nC • Reduced RFI and EMI • Reduced Power Loss in D
International Rectifier
International Rectifier		diode
4HFA06TB120Ultrafast/ Soft Recovery Diode

Bulletin PD -2.382 rev. D 12/00 HFA06TB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions BASE CATHODE VR = 1200V VF(typ.)* = 2.4V IF(AV) = 6.0A Qrr (typ.)= 116nC 4 2 IR
International Rectifier
International Rectifier		diode
5HFA06TB120SSoft Recovery Diode

PD -20602 rev. B 01/2000 HFA06TB120S.. Series HEXFRED TM Ultrafast, Soft Recovery Diode Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions (N/C) (K) BASE + 2 VR = 1200V VF(typ.)* = 2.4V IF(AV)
International Rectifier
International Rectifier		diode
6HFA06TB120SPBFSoft Recovery Diode

PD-96036 HFA06TB120SPbF.. Series HEXFRED Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Sn
International Rectifier
International Rectifier		diode
7HFA08PB120Ultrafast/ Soft Recovery Diode

Bulletin PD -2.365 rev. B 11/00 HFA08PB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 1 CATHODE BASE CATHODE VR = 1200V VF (typ.)* = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140
International Rectifier
International Rectifier		diode



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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