09N70P 데이터시트 PDF ( Data sheet )

AP09N70P, R Advanced Power Electronics Corp. ▼ Dynamic dv, dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement GG S S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D D BVDSS RDS(ON) ID 600, 675V 0.75Ω 9A Description AP09N70 series are specially designed as ma

PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES RDS(ON), VGS@10V,IDS@30A=9mΩ RDS(ON), VGS@4.5V,IDS@30A=12mΩ Advanced trench process technology High Density Cell Design For Uitra Low On-Resistance Specially Designed for DC, DC Converters and Motor Drivers Fully Characteriz

IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv , dt rated P-

SPD 09N05 SIPMOS® Power Transistor Features N channel Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated Avalanche rated dv, dt 175˚C operating temperature Type SPD09N05 SPU09N05 P