09N90E 데이터시트 PDF ( Data sheet )

FMH09N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability FUJI P

PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES RDS(ON), VGS@10V,IDS@30A=9mΩ RDS(ON), [email protected],IDS@30A=12mΩ Advanced trench process technology High Density Cell Design For Uitra Low On-Resistance Specially Designed for DC, DC Converters and Motor Drivers Fully Characteriz

IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv , dt rated P-

SPD 09N05 SIPMOS® Power Transistor Features N channel Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated Avalanche rated dv, dt 175˚C operating temperature Type SPD09N05 SPU09N05 P