15N12 데이터시트 PDF ( Data sheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 15N12 ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switchi

Preliminary Data Sheet IXSH15N120A IGBT "S" Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tsc PC TJ T JM T STG Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuo

AP15N03GH, J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A Description The TO-252 package is universally preferred for all commercialindust

AP15N03H, J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A ▼ Fast Switching G S Description The TO-252 package is universally preferred for all commercialindustrial surface mount app

AP15N03H, J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A Description The TO-252 package is universally preferred for all commercialindustrial surface mount app