1N4002G 데이터시트 PDF ( Data sheet )

CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011, 65, EU and in accordance to WEEE 2002, 96, EC - Halogen-free a

WTE POWER SEMICONDUCTORS 1N4001G 1N4007G Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features ! ! ! ! ! Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! Case: DO-41, Molded Plastic

Glass Passivated Standard Rectifier 1N4001G THRU 1N4007G Current: 1A Votlage: 50 ~ 1000V Features Low forward voltage drop High current capability Low reverse leakage current High Surge current capability 1.0(25.4) MIN. DO-41 .034(.86) .028(.71) DIA. .205(5.2) .160(4.1) .107(2.7) .080(2.0) 1.0(25.

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N4001G to 1N4007G Rectifiers Product speci cation Supersedes data of April 1992 1996 May 24 Philips Semiconductors Product speci cation Recti ers FEATURES Glass passivated High maximum operating temperature Low leakage current

1N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 1A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state

1N2970 thru 1N3015B and 1N3993 thru 1N4000A 10 WATT ZENER DIODES SCOTTSDALE DIVISION DESCRIPTION These high power 10 W Zener diodes represented by the JEDEC registered 1N2970 thru 1N3015B and 1N3993 thru 1N4000A series provide voltage regulation in a selection over a 3.9 V to 200 V broad range of v