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Datasheet 1N5806US Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5806US | Rectifier Diode 1N5802(US), 1N5804(US), 1N5806(US)
Rectifier Diode Series Ultrafast Recovery
Features
Popular JEDEC registered series Void-less hermetically sealed glass package Extremely robust construction Internal “Category I” Metallurgical bonds JAN, JANTX, JANTXV, and JANS available pe |  MA-COM | rectifier |
| 2 | 1N5806US | HERMETIC AXIAL / MELF LEAD RECTIFIER 1N5806 1N5806US
SENSITRON SEMICONDUCTOR
JAN JANTX JANTXV
SJ SX SV
TECHNICAL DATA DATA SHEET 158, REV D
HERMETIC AXIAL / MELF LEAD RECTIFIER
DESCRIPTION: 150 VOLT, 2.5 AMP, 25 NANOSECOND RECTIFIER MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING Peak Inverse Voltage (PIV) Ave |  Sensitron | rectifier |
| 3 | 1N5806US | ULTRA FAST RECOVERY GLASS RECTIFIERS 1N5802US thru 1N5806US
SCOTTSDALE DIVISION
SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
DESCRIPTION
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MILPRF-19500/477 and is ideal for high-reliability a |  Microsemi Corporation | rectifier |
| 4 | 1N5806US | Superfast Recovery Diodes Surface Mount 1N5802US/1N5804US/1N5806US
Superfast Recovery Diodes Surface Mount (US)
POWER DISCRETES Description
Quick reference data VR 50 -150 V IF 1N5802US to 1N5806US = 2.5A trr 1N5802US to 1N5806US = 25nS IR 1N5802US to 1N5806US = 1µA
Features
Very low reverse recovery ti |  Semtech Corporation | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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