1N5822 데이터시트 PDF ( Data sheet )

1N5820-1N5822 High-reliability discrete products and engineering services since 1977 SCHOTTKY RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn, Pb plating), standard, and as R

CREAT BY ART 3A, 20V - 40V Schottky Barrier Rectifiers 1N5820 - 1N5822 Taiwan Semiconductor FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011, 65, EU and in accordance to WEEE 2002, 96, EC - Halogen-free ac

1N5822 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500, 620 3 AMP SCHOTTKY BARRIER RECTIFIERS HERMETICALLY SEALED METALLURGICALLY BONDED 1N5822 and DSB5820 thru DSB5822 and DSB3A20 thru DSB3A40 MAXIMUM RATINGS 0.115, 0.145 Operating Temperature: -65°C to +125°C Storage Temperatur

® 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD DESCRIPTION Axial Power Schottky rectifier suited for Switch M

1N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resis