1N5826R 데이터시트 PDF ( Data sheet )

Silicon Power Schottky Diode Features High Surge Capability Types from 20 V to 40 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5826 thru 1N5828R VRRM = 20 V - 40 V IF = 15 A DO-4 Package Maximum ratings, at Tj =

Transys Electronics LIMITED 1N5826(R) THRU 1N5828(R) SCHOTTKY DIODES STUD TYPE Features High Surge Capability Types up to 40V V RRM 15 A 15Amp Rectifier 20-40 Volts DO-5 Maximum Ratings Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175 B N MC Part Number 1N5826(R) 1N5827

Naina Semiconductor Ltd. Schottky Power Diode, 15A Features Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N5826 thru 1N5828R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive p

1N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resis