1N5831 데이터시트 PDF ( Data sheet )

1N5829-1N5831 High-reliability discrete products and engineering services since 1977 25A SCHOTTKY BARRIER RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn, Pb plating), standa

Silicon Power Schottky Diode Features High Surge Capability Types up to 40V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5829 thru 1N5831R VRRM = 20 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C,

Transys Electronics LIMITED 1N5829(R) THRU 1N6096(R) SCHOTTKY DIODES STUD TYPE Features High Surge Capability Types up to 40V VRRM 25 A 25Amp Rectifier 20-40 Volts DO-4 Maximum Ratings Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +175 B N MC Part Number 1N5829( R ) 1N583

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 1N5829 thru 1N5831 25 Amp Schottky Barrier Rectifier 20 to 35 Volts DO-4 B Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection

1N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resis