1SS181 데이터시트 PDF ( Data sheet )

SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATION 1SS181 Features Small Package Low forward voltage :VF(3) = 0.92 V(Typ.) Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) Small Total Capacitance :CT = 2.2pF(Typ.) Absolute Maximum Ratings Ta = 25 Parameter Peak Reverse Voltage DC Reverse Volt

RoHS 1SS181 SOT-23 Plastic-Encapsulate DIODE Features DPower dissipation PD : 150 mW (Tamb=25oC) TForward Current .,LIF : 100 mA Reverse Voltage VR : 80V Operating and storage junction temperature range OTj, Tstg : -55 oC to +150oC 1 1. 2.4 1.3 SOT-23 3 2 NIC CMarking:A3 2.9 1.9 0.95 0.95 0.4

1SS181 SILICON EPITAXIAL PLANAR DIODE Features Small package Low forward voltage Fast reverse recovery time Small total capacitance Applications Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Cu

Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Me

1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperatur

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z (Previous: ADE-208-153A) Rev.2.00 Oct.23.2003 Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal.. Ordering Information Type No. 1SS106 Cat