1SS187 데이터시트 PDF ( Data sheet )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: D3· D3 SOT-23 1 3 2 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forwar

Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS187 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Current IF: 100 m A Reverse Voltage VR: 80 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS187 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC MECHANICAL DATA * Case: Molded plastic *

1SS187 SILICON EPITAXIAL PLANAR DIODE Features Small package Low forward voltage Fast reverse recovery time Small total capacitance Applications Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Cu

1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperatur

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z (Previous: ADE-208-153A) Rev.2.00 Oct.23.2003 Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal.. Ordering Information Type No. 1SS106 Cat