1SS413 데이터시트 PDF ( Data sheet )

1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Peak Forward

Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS413 1: Cathode 2: Anode 1: Cathode 2: Anode Start of commercial production 2002-11 1 2014-07-09 Rev.3.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwi

Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications High-Speed Switching 2. Features (1) Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 A (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) 3. Packaging and Internal Circuit 1SS413CT CST2 1: Catho

1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperatur

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z (Previous: ADE-208-153A) Rev.2.00 Oct.23.2003 Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal.. Ordering Information Type No. 1SS106 Cat