20N15 데이터시트 PDF ( Data sheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay dr

UNISONIC TECHNOLOGIES CO., LTD 20N15 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The U TC 20N15 is an N-Ch annel POWER MOSFET, it u ses UTC’s advanc ed techn ology to provide c ustomers with high switching speed and low gate charge. The UT C 20N15 is su itable fo r bridge ci rcuit

UNISONIC TECHNOLOGIES CO., LTD 20N15V 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION Preliminary Power MOSFET The UTC 20N15V is an N-Chann el POWER MOSFET, it uses UTC’s advanc ed techn ology to provide c ustomers with high switching speed and low gate charge. The U TC 20N15V is suit able for br

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL, D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation mode

IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175°C operating temperatu

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching applications in pow