20NK50Z 데이터시트 PDF ( Data sheet )

STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S N-CHANNEL 500V -0.23Ω- 17A TO-220, D2PAK, I2SPAK, TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STB20NK50Z STB20NK50Z-S STP20NK50Z STW20NK50Z s s s VDSS 500 500 500 500 V V V V RDS(on) < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 17 17 17 17

STFI20NK50Z N-channel 500 V, 0.23 Ω , 17 A Zener-protected SuperMESH™ Power MOSFET in I²PAKFP package Datasheet production data Features Type STFI20NK50Z VDSS 500 V RDS(on) max < 0.27 Ω ID 17 A PTOT 40 W ■ Fully insulated and low profile package with increased creepage path from pin to he

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL, D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation mode

IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175°C operating temperatu

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching applications in pow