2N3055 데이터시트 PDF ( Data sheet )

2N3055 NPN Power Silicon Transistor Features Available in JAN, JANTX, JANTXV per MIL-PRF19500, 407 TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On C

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055, D Complementary Silicon Power Transistors . . . designed for general purpose switching and amplifier applications. DC Current Gain hFE = 20 70 @ IC = 4 Adc Collector Emitter Saturation Voltage VCE(sat) = 1.1 Vdc (Max) @ IC

TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio amplifier Description The devices are manufacture