2N3866 데이터시트 PDF ( Data sheet )

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN Planar Epitaxial Overlay Transistor 2N3866 DESCRIPTION ·This type is primarily intended for class-A, B or C amplifiers, Frequency multiplier and oscillator circuits. ·High Gain Bandwidth Product fT= 500 MH- (Min.) ·Low Collec

2N3866 2N3866A MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation Ca Jq = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO VEBO 'c PD T stg Value 30 55 3.5 0.4 5.0 28.6 -65 to +200 Unit

NPN 2N3866 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3866 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are intended for VHF-UHF class A, B or C amplifier circuits and oscillator applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N3866 , 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF, UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain =