2N3866A 데이터시트 PDF ( Data sheet )

2N3866 2N3866A MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation Ca Jq = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO VEBO 'c PD T stg Value 30 55 3.5 0.4 5.0 28.6 -65 to +200 Unit

2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3866A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 400 mA VCE PDISS TJ TSTG θJC 30 V 5.0 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC 35 OC, W PACKAGE STYLE TO-39 1

Data Sheet No. 2N3866A Type 2N3866A Geometry 1007 Polarity NPN Qual Level: JAN - JANS Features: General-purpose silicon transistor for switching and amplifier applications. Housed in TO-39 case. Also available in chip form using the 1007 chip geometry. The Min and Max limits shown are per MIL-PRF-

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N3866 , 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF, UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain =